onsemi NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

RS Stock No.: 882-9795Brand: ON SemiconductorManufacturers Part No.: NGTB03N60R2DT4G
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Technical Document

Specifications

Maximum Continuous Collector Current

9 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

49 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.38mm

Maximum Operating Temperature

+175 °C

Gate Capacitance

415pF

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
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P.O.A.

onsemi NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Maximum Continuous Collector Current

9 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

49 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.38mm

Maximum Operating Temperature

+175 °C

Gate Capacitance

415pF

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.