Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 1.23
€ 0.123 Each (In a Pack of 10) (Exc. VAT)
Standard
10
€ 1.23
€ 0.123 Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.123 | € 1.23 |
| 100 - 240 | € 0.052 | € 0.52 |
| 250 - 490 | € 0.051 | € 0.51 |
| 500 - 990 | € 0.049 | € 0.49 |
| 1000+ | € 0.048 | € 0.48 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


