onsemi MJE13009G NPN High Voltage Bipolar Transistor, 12 A, 400 V, 3-Pin TO-220AB
Technical Document
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
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1
Price on asking
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Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products