onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92

RS Stock No.: 806-1750PBrand: onsemiManufacturers Part No.: J109
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

4.58 x 3.86 x 4.58mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

4.58mm

Height

4.58mm

Width

3.86mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0.39

Each (Supplied in a Bag) (Exc. Vat)

onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92
Select packaging type

€ 0.39

Each (Supplied in a Bag) (Exc. Vat)

onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Bag
25 - 75€ 0.39€ 9.75
100 - 475€ 0.292€ 7.30
500 - 975€ 0.228€ 5.69
1000 - 2475€ 0.183€ 4.58
2500+€ 0.161€ 4.03

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

4.58 x 3.86 x 4.58mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

4.58mm

Height

4.58mm

Width

3.86mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.