onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

RS Stock No.: 862-9347PBrand: onsemiManufacturers Part No.: ISL9V2040D3ST
brand-logo
View all in IGBTs

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

130 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 1.845

Each (Supplied on a Reel) (Exc. Vat)

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
Select packaging type

€ 1.845

Each (Supplied on a Reel) (Exc. Vat)

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Reel
5 - 5€ 1.845€ 9.22
10 - 95€ 1.793€ 8.97
100 - 245€ 1.751€ 8.76
250 - 495€ 1.702€ 8.51
500+€ 1.667€ 8.34

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

130 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.