Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 5.44
€ 1.088 Each (In a Pack of 5) (Exc. VAT)
Standard
5
€ 5.44
€ 1.088 Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.