P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

RS Stock No.: 178-4235Brand: onsemiManufacturers Part No.: FDWS9509L-F085
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

5.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Country of Origin

Philippines

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P.O.A.

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

P.O.A.

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

5.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Country of Origin

Philippines