N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

RS Stock No.: 178-4243Brand: onsemiManufacturers Part No.: FCP165N65S3
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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€ 1.589

Each (In a Tube of 50) (Exc. Vat)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

€ 1.589

Each (In a Tube of 50) (Exc. Vat)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China