N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

RS Stock No.: 178-4238Brand: onsemiManufacturers Part No.: FCD360N65S3R0
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

P.O.A.

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China