onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-218
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China
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P.O.A.
30
P.O.A.
30
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-218
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products