Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Country of Origin
China
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P.O.A.
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P.O.A.
500
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Country of Origin
China