NXP PMBF4391,215 N-Channel JFET, 40 V, Idss 50 to 150mA, 3-Pin SOT-23
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
50 to 150mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
3000
P.O.A.
3000
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Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
50 to 150mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products