N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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20
Price on asking
Each (In a Pack of 20) (Exc. VAT)
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20
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Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products