Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115

RS Stock No.: 792-0768PBrand: NexperiaManufacturers Part No.: 2N7002PV,115
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

390 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Price on asking

Each (Supplied on a Reel) (Exc. VAT)

Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115
Select packaging type

Price on asking

Each (Supplied on a Reel) (Exc. VAT)

Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

390 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more