IXYS MKI50-06A7 Bridge IGBT Module, 72 A 600 V, 12-Pin E 2, PCB Mount

RS Stock No.: 193-919Brand: IXYSManufacturers Part No.: MKI50-06A7
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

72 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

E 2

Configuration

Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

12

Transistor Configuration

Full Bridge

Dimensions

107.5 x 45 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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IXYS MKI50-06A7 Bridge IGBT Module, 72 A 600 V, 12-Pin E 2, PCB Mount

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IXYS MKI50-06A7 Bridge IGBT Module, 72 A 600 V, 12-Pin E 2, PCB Mount

Stock information temporarily unavailable.

1

Available in multiples of 1
1Price on asking
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3Price on asking
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5Price on asking
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Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

72 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

E 2

Configuration

Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

12

Transistor Configuration

Full Bridge

Dimensions

107.5 x 45 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more