IGBT, IXGT30N120B3D1, 50 A, 1.200 V, TO-268, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-268
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Configuración de transistor
Single
Longitud
16.05mm
Profundidad
14mm
Altura
5.1mm
Dimensiones
16.05 x 14 x 5.1mm
Temperatura máxima de funcionamiento
+150 ºC
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 17,92
€ 17,92 Each (Sin IVA)
1
€ 17,92
€ 17,92 Each (Sin IVA)
1
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-268
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Configuración de transistor
Single
Longitud
16.05mm
Profundidad
14mm
Altura
5.1mm
Dimensiones
16.05 x 14 x 5.1mm
Temperatura máxima de funcionamiento
+150 ºC
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products