IGBT, IXGH6N170, N-Canal, 6 A, 1.700 V, TO-247AD, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
6 A
Tensión Máxima Colector-Emisor
1700 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247AD
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
16.26 x 5.3 x 21.46mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura Máxima de Operación
+150 ºC
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 11,90
€ 11,90 Each (Sin IVA)
1
€ 11,90
€ 11,90 Each (Sin IVA)
1
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 4 | € 11,90 |
| 5 - 24 | € 10,72 |
| 25 - 49 | € 9,93 |
| 50 - 99 | € 9,28 |
| 100+ | € 8,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
6 A
Tensión Máxima Colector-Emisor
1700 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247AD
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
16.26 x 5.3 x 21.46mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura Máxima de Operación
+150 ºC
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products