N-Channel MOSFET Transistor, 46 A, 300 V, 3-Pin TO-247AC International Rectifier IRFP4242PBF

RS Stock No.: 650-4794Brand: International RectifierManufacturers Part No.: IRFP4242PBF
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Technical Document

Specifications

Brand

International Rectifier

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

430 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

165 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.9mm

Width

5.3mm

Series

HEXFET

Minimum Operating Temperature

-40 °C

Height

20.3mm

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N-Channel MOSFET Transistor, 46 A, 300 V, 3-Pin TO-247AC International Rectifier IRFP4242PBF
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N-Channel MOSFET Transistor, 46 A, 300 V, 3-Pin TO-247AC International Rectifier IRFP4242PBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1Price on asking
2Price on asking
3Price on asking
4Price on asking
5Price on asking
6Price on asking
7Price on asking
8Price on asking
9Price on asking
10Price on asking
11Price on asking
12Price on asking
13Price on asking
14Price on asking
15Price on asking

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

International Rectifier

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

430 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

165 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.9mm

Width

5.3mm

Series

HEXFET

Minimum Operating Temperature

-40 °C

Height

20.3mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in