Infineon HEXFET Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin TO-263
Technical Document
Specifications
Brand
InfineonProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
400A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-263
Series
HEXFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
1.25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
380W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.83 mm
Height
9.65mm
Length
10.67mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Stock information temporarily unavailable.
€ 5.57
€ 2.787 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
2
€ 5.57
€ 2.787 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
400A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-263
Series
HEXFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
1.25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
380W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.83 mm
Height
9.65mm
Length
10.67mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products