N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

RS Stock No.: 178-1455Brand: InfineonManufacturers Part No.: IRFI530NPBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.83mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.8mm

Series

HEXFET

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P.O.A.

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

P.O.A.

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.83mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.8mm

Series

HEXFET