N-Channel MOSFET, 10 A, 40 V, 8-Pin SO International Rectifier IRF7470TRPBF

RS Stock No.: 170-2276Brand: InfineonManufacturers Part No.: IRF7470TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

1

Series

IRF7470PbF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.5mm

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P.O.A.

N-Channel MOSFET, 10 A, 40 V, 8-Pin SO International Rectifier IRF7470TRPBF

4000

Available in multiples of 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

P.O.A.

N-Channel MOSFET, 10 A, 40 V, 8-Pin SO International Rectifier IRF7470TRPBF
Stock information temporarily unavailable.

4000

Available in multiples of 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

1

Series

IRF7470PbF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more