Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Series
IRF7343PbF
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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€ 9.54
€ 0.191 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
€ 9.54
€ 0.191 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.191 | € 1.91 |
| 100 - 240 | € 0.178 | € 1.78 |
| 250 - 490 | € 0.166 | € 1.66 |
| 500+ | € 0.154 | € 1.54 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Series
IRF7343PbF
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products