N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF

RS Stock No.: 162-3277Brand: InfineonManufacturers Part No.: IRF3707ZSTRLPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Height

4.83mm

Series

IRF3707ZS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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P.O.A.

N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

P.O.A.

N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF
Stock information temporarily unavailable.

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Height

4.83mm

Series

IRF3707ZS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more