N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

RS Stock No.: 170-2243Brand: InfineonManufacturers Part No.: IRF1407PBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

4.83mm

Number of Elements per Chip

1

Series

IRF1407PbF

Minimum Operating Temperature

-55 °C

Height

16.51mm

Forward Diode Voltage

1.3V

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€ 1.833

Each (In a Tube of 50) (Exc. Vat)

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

€ 1.833

Each (In a Tube of 50) (Exc. Vat)

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
Stock information temporarily unavailable.

Buy in bulk

QuantityUnit pricePer Tube
50 - 50€ 1.833€ 91.65
100 - 200€ 1.485€ 74.25
250 - 450€ 1.393€ 69.64
500 - 950€ 1.283€ 64.15
1000+€ 1.192€ 59.60

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

4.83mm

Number of Elements per Chip

1

Series

IRF1407PbF

Minimum Operating Temperature

-55 °C

Height

16.51mm

Forward Diode Voltage

1.3V