Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Series
IRF1407PbF
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V
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€ 1.833
Each (In a Tube of 50) (Exc. Vat)
50
€ 1.833
Each (In a Tube of 50) (Exc. Vat)
50
Buy in bulk
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 1.833 | € 91.65 |
100 - 200 | € 1.485 | € 74.25 |
250 - 450 | € 1.393 | € 69.64 |
500 - 950 | € 1.283 | € 64.15 |
1000+ | € 1.192 | € 59.60 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Series
IRF1407PbF
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V