N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1

RS Stock No.: 897-7661PBrand: InfineonManufacturers Part No.: IPZ65R019C7XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

446 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

215 nC @ 10 V

Width

21.1mm

Transistor Material

Si

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1
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P.O.A.

N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

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No hidden fees!

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

446 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

215 nC @ 10 V

Width

21.1mm

Transistor Material

Si

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more