Infineon CoolMOS™ CE N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
127 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.57mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 60.52
€ 1.21 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
50
€ 60.52
€ 1.21 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 90 | € 1.21 | € 12.10 |
| 100 - 240 | € 1.159 | € 11.59 |
| 250 - 490 | € 1.108 | € 11.08 |
| 500+ | € 1.032 | € 10.32 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
127 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.57mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products