N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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€ 2.265
Each (In a Pack of 10) (Exc. Vat)
10
€ 2.265
Each (In a Pack of 10) (Exc. Vat)
10
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | € 2.265 | € 22.65 |
| 20 - 40 | € 1.857 | € 18.58 |
| 50 - 90 | € 1.744 | € 17.44 |
| 100 - 240 | € 1.631 | € 16.31 |
| 250+ | € 1.494 | € 14.94 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products