Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

RS Stock No.: 218-3043Brand: InfineonManufacturers Part No.: IPD35N10S3L26ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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€ 13.13

€ 0.875 Each (In a Pack of 15) (Exc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
Select packaging type

€ 13.13

€ 0.875 Each (In a Pack of 15) (Exc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

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Select packaging type

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QuantityUnit pricePer Pack
15 - 60€ 0.875€ 13.13
75 - 135€ 0.831€ 12.46
150 - 360€ 0.797€ 11.95
375 - 735€ 0.761€ 11.42
750+€ 0.708€ 10.62

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more