Infineon OptiMOS™ -T2 N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
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€ 1,021.38
€ 0.409 Each (On a Reel of 2500) (Exc. VAT)
2500
€ 1,021.38
€ 0.409 Each (On a Reel of 2500) (Exc. VAT)
Stock information temporarily unavailable.
2500
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 2500 | € 0.409 | € 1,021.38 |
| 5000+ | € 0.389 | € 972.33 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products