N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Series
IPD25CN10N G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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€ 1.024
Each (In a Pack of 10) (Exc. Vat)
10
€ 1.024
Each (In a Pack of 10) (Exc. Vat)
10
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 1.024 | € 10.24 |
| 100 - 240 | € 0.799 | € 7.99 |
| 250 - 490 | € 0.747 | € 7.47 |
| 500 - 990 | € 0.696 | € 6.96 |
| 1000+ | € 0.646 | € 6.46 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Series
IPD25CN10N G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products