Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 43.50
€ 0.87 Each (Supplied on a Reel) (Exc. VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 43.50
€ 0.87 Each (Supplied on a Reel) (Exc. VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | € 0.87 | € 4.35 |
| 125 - 245 | € 0.82 | € 4.10 |
| 250 - 495 | € 0.763 | € 3.81 |
| 500+ | € 0.39 | € 1.95 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


