Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.21
Each (Supplied on a Reel) (Exc. VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 1.21
Each (Supplied on a Reel) (Exc. VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Buy in bulk
Quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 1.21 | € 6.05 |
125 - 245 | € 1.124 | € 5.62 |
250 - 495 | € 1.05 | € 5.25 |
500+ | € 0.804 | € 4.02 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC