Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.707
Each (Supplied on a Reel) (Exc. Vat)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type
5
€ 1.707
Each (Supplied on a Reel) (Exc. Vat)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
Quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | € 1.707 | € 8.54 |
50 - 120 | € 1.553 | € 7.76 |
125 - 245 | € 1.453 | € 7.26 |
250 - 495 | € 1.35 | € 6.75 |
500+ | € 1.247 | € 6.23 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC