Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1

RS Stock No.: 754-5421Brand: InfineonManufacturers Part No.: IPB025N10N3GATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G
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€ 4.00

€ 4.00 Each (Exc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1
Select packaging type

€ 4.00

€ 4.00 Each (Exc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1

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Select packaging type

Stock information temporarily unavailable.

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G
Price on askingEach (Supplied on a Reel) (Exc. VAT)

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G
Price on askingEach (Supplied on a Reel) (Exc. VAT)