Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.696
Each (In a Pack of 5) (Exc. Vat)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Select packaging type
5
€ 1.696
Each (In a Pack of 5) (Exc. Vat)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.696 | € 8.48 |
50 - 120 | € 1.509 | € 7.54 |
125 - 245 | € 1.408 | € 7.04 |
250 - 495 | € 1.324 | € 6.62 |
500+ | € 1.221 | € 6.10 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC