N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V
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€ 6.281
Each (In a Pack of 5) (Exc. Vat)
5
€ 6.281
Each (In a Pack of 5) (Exc. Vat)
5
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 6.281 | € 31.41 |
| 25 - 95 | € 5.345 | € 26.72 |
| 100 - 245 | € 4.628 | € 23.14 |
| 250 - 495 | € 4.387 | € 21.94 |
| 500+ | € 3.932 | € 19.66 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products