Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 9.60
€ 1.921 Each (In a Pack of 5) (Exc. VAT)
Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Select packaging type
Standard
5
€ 9.60
€ 1.921 Each (In a Pack of 5) (Exc. VAT)
Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.921 | € 9.60 |
| 25 - 45 | € 1.727 | € 8.64 |
| 50 - 120 | € 1.614 | € 8.07 |
| 125 - 245 | € 1.498 | € 7.49 |
| 250+ | € 1.382 | € 6.91 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


