Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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Please check again later.
Stock information temporarily unavailable.
€ 1.765
Each (Supplied on a Reel) (Exc. VAT)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type
Production pack (Reel)
25
€ 1.765
Each (Supplied on a Reel) (Exc. VAT)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
25
Buy in bulk
Quantity | Unit price | Per Reel |
---|---|---|
25 - 45 | € 1.765 | € 8.83 |
50 - 120 | € 1.648 | € 8.24 |
125 - 245 | € 1.531 | € 7.65 |
250+ | € 1.411 | € 7.06 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2