Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.925
Each (In a Pack of 5) (Exc. Vat)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type
Standard
5
€ 1.925
Each (In a Pack of 5) (Exc. Vat)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 1.925 | € 9.62 |
25 - 45 | € 1.732 | € 8.66 |
50 - 120 | € 1.617 | € 8.08 |
125 - 245 | € 1.502 | € 7.51 |
250+ | € 1.385 | € 6.92 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC