Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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€ 0.81
Each (On a Reel of 800) (Exc. Vat)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
800
€ 0.81
Each (On a Reel of 800) (Exc. Vat)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
800
Buy in bulk
Quantity | Unit price | Per Reel |
---|---|---|
800 - 800 | € 0.81 | € 647.77 |
1600+ | € 0.769 | € 615.43 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2