N-Channel MOSFET, 8.1 A, 600 V, 3-Pin TO-220 FP Infineon IPA60R520E6XKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.1 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23.4 nC @ 10 V
Number of Elements per Chip
1
Width
4.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
15.95mm
Series
CoolMOS E6
Product details
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Price on asking
Each (In a Pack of 10) (Exc. VAT)
Standard
10
Price on asking
Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.1 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23.4 nC @ 10 V
Number of Elements per Chip
1
Width
4.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
15.95mm
Series
CoolMOS E6
Product details
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products