MOSFET Infineon IPA50R280CEXKSA2, VDSS 550 V, ID 13 A, TO-220 de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
13 A
Tensión Máxima Drenador-Fuente
550 V
Series
CoolMOS™ CE
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
280 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
30.4 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-30 V, +30 V
Número de Elementos por Chip
1
Longitud:
10.65mm
Carga Típica de Puerta @ Vgs
32,6 nC a 10 V
Máxima Temperatura de Funcionamiento
+150 ºC
Profundidad
4.9mm
Material del transistor
Si
Mínima Temperatura de Funcionamiento
–40 °C
Tensión de diodo directa
0.85V
Altura
16.15mm
Datos del producto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Price on asking
Each (Supplied in a Tube) (Sin IVA)
Empaque de Producción (Tubo)
5
Price on asking
Each (Supplied in a Tube) (Sin IVA)
Empaque de Producción (Tubo)
5
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
13 A
Tensión Máxima Drenador-Fuente
550 V
Series
CoolMOS™ CE
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
280 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
30.4 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-30 V, +30 V
Número de Elementos por Chip
1
Longitud:
10.65mm
Carga Típica de Puerta @ Vgs
32,6 nC a 10 V
Máxima Temperatura de Funcionamiento
+150 ºC
Profundidad
4.9mm
Material del transistor
Si
Mínima Temperatura de Funcionamiento
–40 °C
Tensión de diodo directa
0.85V
Altura
16.15mm
Datos del producto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products