MOSFET Infineon IMYH200R024M1HXKSA1, VDSS 2.000 V, ID 89 A, PG-TO247-4-PLUS-NT14 de 4 pines
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
89 A
Tensión Máxima Drenador-Fuente
2000 V
Tipo de Encapsulado
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Tipo de montaje
Through Hole
Conteo de Pines
4
Modo de Canal
Mejora
Material del transistor
SiC
Número de Elementos por Chip
1
País de Origen
Malaysia
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€ 2.339,22
€ 77,974 Each (In a Tube of 30) (Sin IVA)
30
€ 2.339,22
€ 77,974 Each (In a Tube of 30) (Sin IVA)
30
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
89 A
Tensión Máxima Drenador-Fuente
2000 V
Tipo de Encapsulado
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Tipo de montaje
Through Hole
Conteo de Pines
4
Modo de Canal
Mejora
Material del transistor
SiC
Número de Elementos por Chip
1
País de Origen
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products