Infineon 256 kB Parallel FRAM 28-Pin SOIC
Technical Document
Specifications
Brand
InfineonMemory Size
256kB
Product Type
FRAM
Organisation
32K x 8 Bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mount Type
Surface
Package Type
SOIC
Pin Count
28
Width
3.98 mm
Height
1.38mm
Length
4.97mm
Standards/Approvals
No
Maximum Operating Temperature
85°C
Minimum Supply Voltage
2V
Maximum Supply Voltage
3.6V
Minimum Operating Temperature
-40°C
Number of Bits per Word
8
Automotive Standard
AEC-Q100
Number of Words
32k
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Stock information temporarily unavailable.
€ 91.06
€ 9.11 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
10
€ 91.06
€ 9.11 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price |
|---|---|
| 10 - 49 | € 9.11 |
| 50 - 99 | € 8.86 |
| 100 - 499 | € 8.64 |
| 500+ | € 8.42 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonMemory Size
256kB
Product Type
FRAM
Organisation
32K x 8 Bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mount Type
Surface
Package Type
SOIC
Pin Count
28
Width
3.98 mm
Height
1.38mm
Length
4.97mm
Standards/Approvals
No
Maximum Operating Temperature
85°C
Minimum Supply Voltage
2V
Maximum Supply Voltage
3.6V
Minimum Operating Temperature
-40°C
Number of Bits per Word
8
Automotive Standard
AEC-Q100
Number of Words
32k
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products