N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON Infineon BSZ097N10NS5ATMA1

RS Stock No.: 170-2300Brand: InfineonManufacturers Part No.: BSZ097N10NS5ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

1.1mm

Series

BSZ097N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 0.743

Each (On a Reel of 5000) (Exc. Vat)

N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON Infineon BSZ097N10NS5ATMA1

€ 0.743

Each (On a Reel of 5000) (Exc. Vat)

N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON Infineon BSZ097N10NS5ATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

1.1mm

Series

BSZ097N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V