Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
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€ 2.557
Each (In a Pack of 10) (Exc. Vat)
10
€ 2.557
Each (In a Pack of 10) (Exc. Vat)
10
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | € 2.557 | € 25.57 |
20 - 40 | € 2.097 | € 20.97 |
50 - 90 | € 1.968 | € 19.68 |
100 - 240 | € 1.841 | € 18.41 |
250+ | € 1.687 | € 16.87 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm