Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
60 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
25 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
50
P.O.A.
50
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
60 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
25 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Product details