Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23

RS Stock No.: 911-4754Brand: InfineonManufacturers Part No.: BCV47E6327HTSA1
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Technical Document

Specifications

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.5 V

Maximum Collector Emitter Saturation Voltage

1 V

Maximum Collector Cut-off Current

0.01mA

Length

2.9mm

Height

0.9mm

Width

1.3mm

Maximum Power Dissipation

360 mW

Dimensions

2.9 x 1.3 x 0.9mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Darlington Transistors, Infineon

Bipolar Transistors, Infineon

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€ 0.04

Each (On a Reel of 3000) (Exc. Vat)

Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23

€ 0.04

Each (On a Reel of 3000) (Exc. Vat)

Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23
Stock information temporarily unavailable.

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Technical Document

Specifications

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.5 V

Maximum Collector Emitter Saturation Voltage

1 V

Maximum Collector Cut-off Current

0.01mA

Length

2.9mm

Height

0.9mm

Width

1.3mm

Maximum Power Dissipation

360 mW

Dimensions

2.9 x 1.3 x 0.9mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Darlington Transistors, Infineon

Bipolar Transistors, Infineon