Diodes Inc Quad N/P-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC ZXMHC3F381N8TC
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.98 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
60 mΩ, 80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.35 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
4
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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€ 4.76
€ 0.953 Each (In a Pack of 5) (Exc. VAT)
Standard
5
€ 4.76
€ 0.953 Each (In a Pack of 5) (Exc. VAT)
Standard
5
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.98 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
60 mΩ, 80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.35 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
4
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products