Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
450 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 5.14
€ 0.051 Each (In a Pack of 100) (Exc. VAT)
Standard
100
€ 5.14
€ 0.051 Each (In a Pack of 100) (Exc. VAT)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
450 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details


